Infineon Technologies AG Announces New 600V Gallium Nitride (GaN) Transistor with Integrated Level-Shift Gate Driver
Infineon Technologies Launches IGI60L1111B1M: A Highly Integrated GaN Half-Bridge Solution
Infineon Technologies has unveiled its latest innovation in Gallium Nitride (GaN) transistors: the IGI60L1111B1M. This newly launched GaN transistor integrates a half-bridge power stage, consisting of two CoolGaN transistors rated at 600 V / 110 mΩ (RDS(on) typ.), with an integrated level-shift gate driver and a bootstrap diode. This high level of integration is packaged in a small 6 x 8 mm TFLGA-27 package, offering significant advantages in terms of size, component count, and system performance.
The IGI60L1111B1M is designed for ease of use and high efficiency. It can operate over a wide VDD range (10 to 24 V) and is compatible with PWM inputs, making it easy to integrate into various power supply and motor drive applications. Furthermore, it boasts zero reverse-recovery charge and includes turn-ON & OFF dv/dt slew rate control to mitigate cross-conduction, enhancing system reliability and efficiency.
Key Benefits of the IGI60L1111B1M compared to a discrete solution:
The integrated nature of the IGI60L1111B1M offers several key advantages over discrete implementations:
- Significant Reduction in Component Count: The integration of the half-bridge, gate driver, and bootstrap diode results in a 4x reduction in component count, simplifying PCB design and assembly.
- Reduced Footprint on PCB: The compact TFLGA-27 package combined with the reduced component count leads to a 2x reduction in footprint on the PCB, enabling smaller and more compact designs.
System-Level Benefits:
The benefits of the IGI60L1111B1M extend beyond the component level, offering advantages at the system level:
- Reduced Cost: The reduced component count and simplified PCB design translate to lower overall system cost.
- Reduced Weight: The compact package and fewer components contribute to a reduction in system weight, which is particularly important in portable and space-constrained applications.
- Reduced Complexity: The high level of integration simplifies system design and reduces the complexity of PCB layout and assembly, leading to faster time-to-market.
Key Applications of the IGI60L1111B1M:
The IGI60L1111B1M is well-suited for a variety of applications, including:
- Adapters and Chargers: The high efficiency and compact size make it ideal for use in adapters and chargers for consumer electronics, such as laptops, mobile phones, and tablets.
- Motor Drives: The ability to handle variable speed DC and SRM (Switched Reluctance Motor) motors makes it suitable for applications such as power tools, robotics, and industrial automation.
Source Your Infineon Components from BonChip Electronics!
BonChip Electronics is a proud distributor of Infineon Technologies products, offering their comprehensive range of high-quality semiconductor solutions, including the innovative IGI60L1111B1M GaN half-bridge transistor. We are committed to providing our customers with exceptional service, competitive pricing, and the most convenient delivery options. Contact us today to discuss your project requirements and order the IGI60L1111B1M and other Infineon components. We offer comprehensive sales and ordering support for their entire product line, ensuring the best service and most efficient delivery.
